GaN represents a revolutionary advancement in semiconductor technology, particularly for space applications where extreme conditions demand exceptional performance characteristics.

Teledyne e2v has announced the immediate release of Engineering Models for its latest 16GB radiation-tolerant DDR4 memory, marking a significant expansion of its space-grade DDR4 portfolio. Already recognized as the industry’s most widely adopted solution, the portfolio has seen the successful deployment of hundreds of 4GB and 8GB flight models across various space missions. The new 16GB DDR4 device preserves the compact dimensions of its predecessors—measuring just 15mm x 20mm x 1.92mm—and is fully pin-to-pin compatible with existing 4GB and 8GB variants.

Infineon’s radiation-hardened GaN transistors are specifically designed for mission-critical applications in on-orbit satellites, crewed space missions, and deep-space exploration probes.

Amit Shah, Jyotiraditya Scindia, and Northeastern leaders will attend the 72nd NEC session in Agartala to discuss development progress, including NESAC's role.