A controlled tarnishing step on the silver surface precedes the solid-vapor-phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with imp...

The reliability and stability of inkjet-printed graphene flake sensors are evaluated. Stress assessments take place in ozone-rich environments and at elevated temperatures, with the observation of a ....

Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential ste...

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ∼0.16 V and ∼0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by in situ transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semiclassical electron transport model was used to reproduce the current–voltage characteristics and support the proposed underlying switching mechanisms.