Pamburayi Mpofu
paskalpamburayi.bsky.social
Pamburayi Mpofu
@paskalpamburayi.bsky.social
Materials Chemist| @Sweinstitute Alumni| Doctoral Fellow in the #Pedersengroup @liu_universitet| #ALDep, #CVDep| 💪🏽Fitness| 🥃Whiskey| 🏏🏉⚽️ #GGMU| 📍🇸🇪
Our latest preprint, ”Atomic Layer Deposition of AlxTi1-xN via Co-evaporation of Metal Precursors” demonstrates that an alternative approach can be used in #ALDep of Al-rich AlxTi1-xN by co-evaporation of similar ligand precursors.

Link to the full #openaccess preprint:
doi.org/10.26434/chemr…
https://doi.org/10.26434/chemr…
January 24, 2025 at 7:41 PM
Reposted by Pamburayi Mpofu
In our latest preprint "Using a heavy inert diffusion additive for superconformal #ALDep" we show how to get step coverage > 1 in ALD. Great work by Arun, @paskalpamburayi.bsky.social, and @penaniiranen.bsky.social
chemrxiv.org/engage/chemr...
Using a heavy inert diffusion additive for superconformal atomic layer deposition
The shrinking of device nodes increases the demand for deposition processes to seamlessly fill nanometer-scale features. Despite the precision of atomic layer deposition (ALD), it cannot deposit in a ...
chemrxiv.org
December 13, 2024 at 11:14 AM
Reposted by Pamburayi Mpofu
Our latest manuscript
"Surface chemistry in #ALDep of Gallium Nitride from Triethylgallium and Ammonia studied by mass spectroscopy"
is now available as a preprint:
chemrxiv.org/engage/chemr...
Surface chemistry in Atomic Layer Deposition of Gallium Nitride from Triethylgallium and Ammonia studied by mass spectroscopy
Gallium nitride (GaN) is a commonly used semiconductor owing to its high chemical and thermal stability, which makes it suitable for various applications in modern electronics. GaN film deposition is ...
chemrxiv.org
November 25, 2024 at 2:59 PM
Reposted by Pamburayi Mpofu
Beam time granted! Excited to return to MAX IV in the spring for more in operando near ambient pressure #XPS of nitride #ALDep!
November 18, 2024 at 9:51 PM