It is our recent publication!
Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
doi.org/10.35848/188...
via @ioppublishing.bsky.social
Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
doi.org/10.35848/188...
via @ioppublishing.bsky.social
Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions - IOPscience
Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions, Zhang, Endong, Matsuyama, Hiroko, Kato, Masashi
doi.org
September 11, 2025 at 11:48 AM
It is our recent publication!
Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
doi.org/10.35848/188...
via @ioppublishing.bsky.social
Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions
doi.org/10.35848/188...
via @ioppublishing.bsky.social
My new paper for channeling ion implantation to SiC has been published.
Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC doi.org/10.35848/134...
via @ioppublishing.bsky.social
Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC doi.org/10.35848/134...
via @ioppublishing.bsky.social
Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC - IOPscience
Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC, Kato, Masashi
doi.org
August 18, 2025 at 10:53 PM
My new paper for channeling ion implantation to SiC has been published.
Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC doi.org/10.35848/134...
via @ioppublishing.bsky.social
Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC doi.org/10.35848/134...
via @ioppublishing.bsky.social
Our new paper for SiC characterization.
Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers pubs.aip.org/aip/rsi/arti...
Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers pubs.aip.org/aip/rsi/arti...
Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers
We report a novel method known as focused light birefringence for the three-dimensional observation of dislocations in silicon carbide (SiC) wafers. Dislocation
pubs.aip.org
August 11, 2025 at 10:50 PM
Our new paper for SiC characterization.
Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers pubs.aip.org/aip/rsi/arti...
Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers pubs.aip.org/aip/rsi/arti...