⚛️ 🧪 Identifying atomic defects in narrow band gap materials is really hard, but defects have a huge effect on infrared device performance. This is foundational work calculating defects in InGaAs, an important alloy for optoelectronics and high speed devices

doi.org/10.1103/7lsb...

#semiconductor

Trying again to add to the Physics feed ⚛️

⚛️ 🧪 We took a surface technique for ultra-high Si doping from use for cool atomic precision advanced manufacturing (APAM) physics experiments to a CMOS compatible platform that could advance future transistors doi.org/10.1063/5.02... thrilled this was a Featured article in Applied Physics Reviews!

Finding defects is an important step in designing better semiconductors, including wide band gap III-phosphides doi.org/10.1088/1361...

This design greatly improved the performance of III-V semiconductor infrared detectors and was a major advancement for the field: doi.org/10.1063/1.23...

Paving the way for atomic precision advanced manufacturing (APAM) to enable cutting edge technologies doi.org/10.1088/2399...

This is great work investigating how the radiation in space damages narrow band gap semiconductors: doi.org/10.1109/TNS....

The future of advanced chips could include atomic layer patterning for devices, not just with an STM, but with a laser (doi.org/10.1117/1.JM...), or EUV (doi.org/10.1038/s414...)

Really interesting work from AFRL developing new III-V alloys with Bi for high-performance infrared sensors: doi.org/10.1063/5.02...

⚡New research from a team from Sandia National Labs reviews how "areal TFETs” are promising to overcome the limits of conventional transistors. They dive into 2D materials, III-V & group-IV approaches, plus modeling strategies to make these devices practical

Read: iopscience.iop.org/article/10.1...

Cool result where what’s normally a surface defect in InAs became a feature enabling a functional device! doi.org/10.1063/5.02...

Foundational work to inexpensively solve the problem of computationally identifying defects in infrared materials to design better sensors! doi.org/10.1103/7lsb...

Sandia National Labs integration of atomic precision advanced manufacturing with CMOS promises to inspire devices that will use its capabilities for quantum confinement and novel electronic structure.

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https://aippub.org/4olE0yC

New research from Sandia National Labs in applied Physics Reviews using cool surface science to take a technique from basic physics to a CMOS-compatible platform for manufacturing transistors. doi.org/10.1063/5.02...