Journal of Vacuum Science & Technology
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jvstab.bsky.social
Journal of Vacuum Science & Technology
@jvstab.bsky.social
JVST A publishes research on interfaces & surfaces of materials, thin films, & plasmas.

JVST B covers microelectronics & nanotechnology, with a focus on processing, measurement, & phenomena associated with micrometer & nanometer structures & devices.
Featured on our most recent #JVSTB cover, researchers from AIST in Japan highlight the critical importance of interparticle contact in optimizing all-solid-state battery performance, offering valuable insights for improving battery design.🔋
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November 12, 2025 at 6:33 PM
Researchers from @thermofishersci.bsky.social investigate emission profiles & uniformity of electron emitters with varying radii, enabling end-users to choose the best emitters for their needs, including enhancing multibeam applications.
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Angular emission evolution of the ZrO/W(100) Schottky emitter
An investigation of the uniformity and evolution of the angular emission distribution of the ZrO/W(100) Schottky emitter operated at an angular intensity of 1.0
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November 11, 2025 at 8:46 PM
Compared to commercial Si x-ray detectors, a Ni/Au β-Ga₂O₃ Schottky barrier diode shows 14× higher sensitivity at 500 K with fast response & low noise — ideal for harsh environments. doi.org/10.1116/6.00...
Effect of space charge-limited mechanism on the x-ray detection performance of Ni/Au β-Ga2O3 Schottky diode at high temperature
Gallium oxide-based (Ga2O3) detectors have shown great potential for x-ray detection. In specific high-temperature environmental application scenarios such as p
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November 10, 2025 at 7:32 PM
New study from @helsinki.fi shows phenol can selectively block Ru growth in AS-ALD. Phenol inhibits Ru on W, TiN, HfO₂ & ZrO₂, enabling high selectivity (>0.8) for up to 1000 ALD cycles.
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Area selective atomic layer deposition of ruthenium with phenol as a small molecule inhibitor
A study on area selective atomic layer deposition (AS-ALD) of ruthenium was performed using phenol as a small molecule inhibitor (SMI). The surfaces studied wer
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October 30, 2025 at 5:12 PM
Authors from the Indian Institute of Technology present a novel approach using magnetron sputtering for the deposition of p-type SnOx films via Ge doping, which is a topic of significance for optical & electrical applications based on semiconductor oxides.
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Boosting hole mobility in p-type SnOx (x < 2) film through Ge incorporation via co-sputtering
Electrical characteristics of SnOx (x < 2) films are investigated, accounting for germanium (Ge) incorporation in tin oxide. It was found that by tailoring t
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October 29, 2025 at 2:52 PM
In #ALDep, temp vs. growth per cycle (GPC) is often viewed as a piecewise-continuous function, GPC varying with increasing temp. This study from @univofmaryland.bsky.social explores if alumina ALD based on TMA & water follow the same trends proposed in previous literature. doi.org/10.1116/6.00...
Regression analysis of temperature-dependent alumina atomic layer deposition growth per cycle using trimethylaluminum and water as precursors
Temperature-dependent alumina atomic layer deposition (ALD) growth per cycle ( G P C) data were collected from studies of the trimethylaluminum (TMA)/water ALD
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October 28, 2025 at 5:57 PM
Authors from @princeton.edu use #machinelearning to simulate interatomic potentials for molecular dynamics to model ion-enhanced etching of Si by Cl atoms. They show how DeepMD can generate accurate force fields for plasma-surface systems & the importance of curating data. doi.org/10.1116/6.00...
Deep potential molecular dynamics simulations of ion-enhanced etching of silicon by atomic chlorine
The continued development of plasma-assisted processing techniques requires a fundamental understanding of plasma-surface interactions. Molecular dynamics (MD)
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October 27, 2025 at 5:57 PM
AI & ML improve #ALDep by optimizing processes, predicting film quality, assisting precursor discovery, & integrating physics-informed models for reliable thin-film design.

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Artificial intelligence in atomic layer deposition
Atomic layer deposition (ALD) is a vapor-phase thin-film deposition technique offering precise atomic-scale control over film thickness and conformality. Widely
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October 24, 2025 at 5:39 PM
Three #ALDep processes for NiO films developed at @tue.nl offer tunable stoichiometry and optoelectrical properties for energy and sensor applications. doi.org/10.1116/6.00...
On the impact of atomic layer deposition processing on the chemical and opto-electrical properties of NiO thin films
Nickel oxide (NiO) is a promising p-type semiconductor extensively investigated for applications in photovoltaics, electrochemical energy storage, and gas senso
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October 23, 2025 at 3:09 PM
DeepREBO, a deep-learned potential developed by researchers at @princeton.edu, replicates REBO2 for plasma-surface simulations using <15k snapshots. Smart datasets beat large ones—highlighting efficient training for accurate molecular dynamics simulations.

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Development and transferability of neural-network models for plasma-surface interactions
Plasma-surface interactions are increasingly critical to modern technologies; yet, accurate molecular dynamics simulations remain limited by the capabilities of
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October 22, 2025 at 5:58 PM
Optimization of the PECVD of α-Si in the fabrication of metasilicon lenses solves the bubble formation problem & ensures full compatibility with the existing CMOS-compatible semiconductor process, all while boosting film quality & process reliability. doi.org/10.1116/6.00...
Research and optimization of plasma-enhanced chemical vapor deposition α-Si process compatible with 8-in. CMOS technology
This research focuses on the optimization of PECVD-deposited α-Si in the fabrication of metasilicon lenses compatible with 8-in. CMOS semiconductor processes. U
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October 22, 2025 at 5:56 PM
This study expands on the use of high-entropy alloys as laser cladding coating materials by proposing a new scheme using B4C-strengthened FeCrNiTiZr to improve the high-temperature performance of H13 steel.

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Effect of B4C on microstructure and wear performance of FeCrNiTiZr laser cladded coatings
FeCrNiTiZr + xB4C coatings have been fabricated on H13 by laser cladding, and the effects of B4C on the phase composition, microstructure, microhardness, and we
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October 20, 2025 at 7:49 PM
Hybrid PLD enables the growth of textured ZnS thin films on BEOL-compatible conditions & surfaces with smooth morphology, low leakage, & intrinsic behavior—showing promise for ZnS as a p-type channel material. doi.org/10.1116/6.00...
Textured growth and electrical characterization of zinc sulfide on back-end-of-the-line compatible substrates
Scaling of transistors has enabled continuous improvement in the performance of logic devices, especially with contributions from materials engineering. However
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October 17, 2025 at 7:10 PM
Thermal analysis of 19 NHCs shows how steric bulk affects volatility & activation temps—key for area-selective #ALDep. Authors from @carleton.ca & @c2mci.bsky.social show that NHCs have strong potential as stable, tunable vapor-phase small molecule inhibitors. doi.org/10.1116/6.00...
Benzimidazolium hydrogen carbonate salts—Investigation of thermal properties in the context of small molecule inhibitors
The thermal properties of N-heterocyclic carbenes (NHCs) are of interest as these species are attracting attention for use as small molecule inhibitors (SMIs) i
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October 16, 2025 at 4:54 PM
Less than 50% of key instrument parameters are reported in NAP-XPS papers.🤯Researchers from BYU and SPECS GmbH show that better in-paper reporting is needed to boost transparency and reproducibility.

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Benzimidazolium hydrogen carbonate salts—Investigation of thermal properties in the context of small molecule inhibitors
The thermal properties of N-heterocyclic carbenes (NHCs) are of interest as these species are attracting attention for use as small molecule inhibitors (SMIs) i
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October 15, 2025 at 5:12 PM
Gold-coated nanopipettes are leveling-up nanoscale Raman sensing! Authors from @UHouston optimized plasmonic nanopipettes using a simple fabrication & evaluation scheme, & described the process so others can use the same approach to optimize their probes. doi.org/10.1116/6.00...
Fabrication and evaluation of plasmonic nanopipets for near-field enhanced Raman spectroscopy
Plasmonic nanopipets, which are functionalized with plasmonic nanomaterials, are widely used in near-field spectroscopy to enhance the optical processes. The fa
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October 15, 2025 at 1:41 PM
This low-temperature supercritical fluid treatment of β-Ga2O3 Schottky barrier diodes causes increased breakdown voltage, reduced interface state density, & superior high-temperature operational stability of treated devices. #Semiconductors
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Enhanced β-Ga2O3 Schottky diode interface characteristics via low-temperature supercritical fluid technology
This study presents a comprehensive investigation into the impact of supercritical fluid (SCF) N2O treatment on β-Ga2O3 Schottky barrier diodes (SBDs). Capacita
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September 15, 2025 at 6:46 PM
A new 3D thermal-electrical model for Czochralski silicon growth reveals limitations in the 2D models in simulating heat transfer & heat loss—allowing for more effective application of numerical simulation to promote high-quality & low-cost crystal growth. doi.org/10.1116/6.00...
Comparison of heat transfer and heat loss between 3D thermal-electric coupling model and 2D model in Czochralski silicon growth
Czochralski (CZ) silicon is widely utilized as a crucial substrate material in the semiconductor industry. As an effective and cost-efficient approach, numerica
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September 12, 2025 at 7:46 PM
This study from authors at Xiamen University investigated the optoelectronic & communication performance of micro-LEDs with varied thicknesses of Al2O3 or SiO2 passivation layers, offering insights for the fabrication of these high-performance devices.

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Impacts of different thickness Al2O3 and SiO2 atomic layer deposition sidewall passivation for GaN-based micro-LEDs
In this work, 76 × 127 μm2 blue micro-LEDs with 0, 15, and 60 nm Al2O3 or SiO2 passivation layers were fabricated by adopting atomic layer deposition (ALD) side
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September 9, 2025 at 4:56 PM
Authors from AIST & Kyoto University developed a volcano-structured double-gate FEA, with the focus electrode set below the gate electrode, allowing for high-current operation & providing the sensitivity & tolerance needed for some semiconductor processes. doi.org/10.1116/6.00...
Effect of the TiN-coating-layer properties on the electron emission of volcano-structured silicon field emitter arrays
Volcano-structured field emitter arrays (FEAs) have gained attention due to their excellent electron beam-focusing properties. While we have demonstrated high-c
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September 8, 2025 at 6:09 PM
Boost your ALD films! Authors from @oregonstate.edu show how microwave-enhanced #ALDep cuts defects & improves film quality & electrical performance—during deposition, not after.
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Microwave enhanced atomic layer deposition (MW-ALD): Incorporating a microwave antenna into an ALD system and performing in situ direct microwave exposure during ALD
Self-limiting, purge-separated, cyclic reactions enable atomic layer deposition (ALD) to produce highly uniform and conformal films with precise thickness contr
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September 5, 2025 at 4:35 PM
Researchers from @coschoolofmines.bsky.social & @lamresearch.com search show that O₂ dilution of C₄F₆/Ar plasma controls CFₓ buildup to control the etch rate, & propose a possible mechanism responsible for the temperature dependence for RIE of SiNx in C₄F₆/O₂/Ar plasmas.

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Effect of O2 dilution and substrate temperature on the etching of SiNx in a C4F6/Ar plasma
The reactive ion etching (RIE) of SiNx is commonly realized with fluorocarbon plasmas. During RIE, a carbon-rich CFx film typically accumulates on the surface,
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September 3, 2025 at 8:03 PM
Researchers from @univofmaryland.bsky.social & @uvmvermont.bsky.social report the first molecular layer deposition of a crown ether-containing polymer, establishing a new route for incorporating functional macrocycles into conformal, nanoscale coatings. 👑
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Molecular layer deposition of a polymeric crown ether
Crown ethers are macrocyclic molecules known for their ion-selective complexation and have been widely used in solution-phase systems for sensing, separation, a
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August 27, 2025 at 4:29 PM
Researchers from Hokkaido University demonstrate how the alternative precursor AlMe₂(iPr-AMD) plus the use of self-assembled monolayers as surface passivation agents enables highly selective Al₂O₃ film growth with better stability & control than TMA.
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Area-selective atomic layer deposition of Al2O3 film on Cu and Si substrates using bulky Al precursor AlMe2(iPr-AMD)
Trimethylaluminum (TMA) loses its selectivity within a short time, which is problematic because it exhibits excessively high reactivity toward H2O and surface s
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August 26, 2025 at 7:12 PM
This study presents a systematic investigation on anisotropy in rutile titanium dioxide, a typical photocatalyst, highlighting anisotropic charge carrier dynamics in electrocatalysts and exploring variations in hydrogen evolution reaction behavior.
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Electrochemical pipette-based analysis on anisotropy in rutile TiO2 for photoelectrochemical hydrogen revolution
Photo-assisted electrochemical electrocatalysis has emerged as a highly efficient approach for promoting the hydrogen evolution reaction (HER). Recent advances
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August 15, 2025 at 4:42 PM