Journal of Vacuum Science & Technology
@jvstab.bsky.social
JVST A publishes research on interfaces & surfaces of materials, thin films, & plasmas.
JVST B covers microelectronics & nanotechnology, with a focus on processing, measurement, & phenomena associated with micrometer & nanometer structures & devices.
JVST B covers microelectronics & nanotechnology, with a focus on processing, measurement, & phenomena associated with micrometer & nanometer structures & devices.
JVST is proud to be a part of this impressive portfolio! 🏅
We're pleased to share 2025 metrics from our #MaterialsScience portfolio! 👏
We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers!
🔗 https://aippub.org/4qD0c7v
We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers!
🔗 https://aippub.org/4qD0c7v
February 13, 2026 at 5:09 PM
JVST is proud to be a part of this impressive portfolio! 🏅
Reposted by Journal of Vacuum Science & Technology
We're pleased to share 2025 metrics from our #MaterialsScience portfolio! 👏
We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers!
🔗 https://aippub.org/4qD0c7v
We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers!
🔗 https://aippub.org/4qD0c7v
February 13, 2026 at 2:01 PM
We're pleased to share 2025 metrics from our #MaterialsScience portfolio! 👏
We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers!
🔗 https://aippub.org/4qD0c7v
We can't wait to see what the future continues to bring to our community of authors, reviewers, and readers!
🔗 https://aippub.org/4qD0c7v
Authors from Ionoptika, Ltd. and Cambridge Univ. team up to expand the use of SIMS in materials analysis by exploring the use of a variety of giant gas cluster ion beams in sputtering & depth profiling of complex inorganic/organic materials.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Impact of cluster size on sputtering effects in hybrid organic/inorganic materials during cluster SIMS depth profiling
This study systematically investigates the sputtering effects and optimized analytical performance of various cluster ion beams for the depth profiling of tande
doi.org
February 12, 2026 at 5:50 PM
Authors from Ionoptika, Ltd. and Cambridge Univ. team up to expand the use of SIMS in materials analysis by exploring the use of a variety of giant gas cluster ion beams in sputtering & depth profiling of complex inorganic/organic materials.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Reposted by Journal of Vacuum Science & Technology
Boron nitride is stable up to about 900 degrees Celsius and exhibits excellent thermal conductivity, making it a useful material for dissipating heat in electronics, batteries, and other high-temperature applications. #Scilight
Learn more 👇
https://aippub.org/3OAc6BK
Learn more 👇
https://aippub.org/3OAc6BK
Boosting boron nitride’s high-temperature performance
Coating boron nitride nanotube fabrics with aluminum oxide improved its thermal conductivity and oxidation resistance.
pubs.aip.org
February 12, 2026 at 2:00 PM
Boron nitride is stable up to about 900 degrees Celsius and exhibits excellent thermal conductivity, making it a useful material for dissipating heat in electronics, batteries, and other high-temperature applications. #Scilight
Learn more 👇
https://aippub.org/3OAc6BK
Learn more 👇
https://aippub.org/3OAc6BK
Reposted by Journal of Vacuum Science & Technology
We invite researchers to submit abstracts for the International Workshop on Gallium Oxide and Related Materials (#IWGO2026) August 2-7, 2026, in College Park, Maryland
⏳Submit by March 18,
▶️https://iwgo2026.avs.org/
▶️https://conta.cc/49LmxcR
#GalliumOxide
⏳Submit by March 18,
▶️https://iwgo2026.avs.org/
▶️https://conta.cc/49LmxcR
#GalliumOxide
February 11, 2026 at 7:14 PM
We invite researchers to submit abstracts for the International Workshop on Gallium Oxide and Related Materials (#IWGO2026) August 2-7, 2026, in College Park, Maryland
⏳Submit by March 18,
▶️https://iwgo2026.avs.org/
▶️https://conta.cc/49LmxcR
#GalliumOxide
⏳Submit by March 18,
▶️https://iwgo2026.avs.org/
▶️https://conta.cc/49LmxcR
#GalliumOxide
Authors from @uni-magdeburg.de use the pyroelectric effect to create a compact, energy-efficient X-ray source & show a performance boost by moving from single to double-crystal config. This opens the door to portable, low-power systems for materials analysis.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Investigation of x-ray energy characteristics in x-ray fluorescence applications using dual pyroelectric crystals
The pyroelectric effect enables the generation of a strong electric field, which can lead to the emission and acceleration of electrons, ultimately resulting in
doi.org
February 11, 2026 at 4:41 PM
Authors from @uni-magdeburg.de use the pyroelectric effect to create a compact, energy-efficient X-ray source & show a performance boost by moving from single to double-crystal config. This opens the door to portable, low-power systems for materials analysis.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
In #JVSTB, researchers present a tabletop EUV test platform designed for lab-scale evaluation of lithography materials to reduce reliance on large, costly facilities while still enabling reliable measurements
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Tabletop extreme ultraviolet test platform for optical property evaluation of lithography materials
Extreme ultraviolet (EUV) lithography, owing to its ultrashort wavelength and high photon energy, serves as a key technology in advanced semiconductor manufactu
doi.org
February 10, 2026 at 4:18 PM
In #JVSTB, researchers present a tabletop EUV test platform designed for lab-scale evaluation of lithography materials to reduce reliance on large, costly facilities while still enabling reliable measurements
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Residues left behind from vapor deposition experiments can significantly influence film growth.
Researchers from @ox.ac.uk show how residual TPPO alters perovskite crystallization behavior, marking contamination control as critical for vacuum-based processing.
doi.org/10.1116/6.00...
Researchers from @ox.ac.uk show how residual TPPO alters perovskite crystallization behavior, marking contamination control as critical for vacuum-based processing.
doi.org/10.1116/6.00...
Impact of residual triphenylphosphine oxide on the crystallization of vapor-deposited metal halide perovskite films
Thermal evaporation is an industrially compatible technique for fabricating metal halide perovskite thin films, without the requirement for hazardous solvents.
doi.org
February 9, 2026 at 8:32 PM
Residues left behind from vapor deposition experiments can significantly influence film growth.
Researchers from @ox.ac.uk show how residual TPPO alters perovskite crystallization behavior, marking contamination control as critical for vacuum-based processing.
doi.org/10.1116/6.00...
Researchers from @ox.ac.uk show how residual TPPO alters perovskite crystallization behavior, marking contamination control as critical for vacuum-based processing.
doi.org/10.1116/6.00...
Researchers from @uchicagopme.bsky.social and @berkeleylab.lbl.gov explore why certain “smart” material tweaks don’t work the way we expect—and how to design around that reality.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Si content in methacrylamide-containing A-b-(B-r-C) block copolymers and its impact on reactive ion etching properties
Block copolymers (BCPs) of an A-block-(B-random-C) architecture have been explored as materials for nanolithography because the composition and chemistry of the
doi.org
February 5, 2026 at 8:56 PM
Researchers from @uchicagopme.bsky.social and @berkeleylab.lbl.gov explore why certain “smart” material tweaks don’t work the way we expect—and how to design around that reality.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
This study describes a machine-learning algorithm using attention-based CNNs, offering the first dataset and high-accuracy, context-aware characterization of silicon microstructures for field-emission tip analysis.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
SiMiC: Context-aware silicon microstructure characterization using attention-based convolutional neural networks for field-emission tip analysis
Accurate characterization of silicon microstructures is essential for advancing microscale fabrication, quality control, and device performance. Traditional ana
doi.org
February 4, 2026 at 7:11 PM
This study describes a machine-learning algorithm using attention-based CNNs, offering the first dataset and high-accuracy, context-aware characterization of silicon microstructures for field-emission tip analysis.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
The Li-ion battery is essential for powering our everyday devices.💻📱
Developing rechargeable LIBs w/ high power density & durability requires understanding the reactions that occur during charging & discharging.
doi.org/10.1116/6.00...
Developing rechargeable LIBs w/ high power density & durability requires understanding the reactions that occur during charging & discharging.
doi.org/10.1116/6.00...
MeV-SIMS measurement of negative electrode surface of lithium ion battery after charging and discharging
The MeV-SIMS technique uses heavy ion beams with energies in the MeV range, allowing samples to be measured under ambient conditions due to the high transmissio
doi.org
January 30, 2026 at 5:39 PM
The Li-ion battery is essential for powering our everyday devices.💻📱
Developing rechargeable LIBs w/ high power density & durability requires understanding the reactions that occur during charging & discharging.
doi.org/10.1116/6.00...
Developing rechargeable LIBs w/ high power density & durability requires understanding the reactions that occur during charging & discharging.
doi.org/10.1116/6.00...
Selective, solvent-free nanoscale patterning is crucial as devices integrate more sensitive & unconventional materials.
From @gatechengineers.bsky.social, this work presents an all-water-based electron beam lithography approach w/ polyacrylic acid hydrogel as a resist.
doi.org/10.1116/6.00...
From @gatechengineers.bsky.social, this work presents an all-water-based electron beam lithography approach w/ polyacrylic acid hydrogel as a resist.
doi.org/10.1116/6.00...
All water based nanoscale electron beam lithography using polyacrylic acid hydrogel as a resist
This work investigates improving pattern resolution and contrast in polyacrylic acid (PAA) hydrogel films as a resist to below 100 nm lateral dimensions using e
doi.org
January 29, 2026 at 5:32 PM
Selective, solvent-free nanoscale patterning is crucial as devices integrate more sensitive & unconventional materials.
From @gatechengineers.bsky.social, this work presents an all-water-based electron beam lithography approach w/ polyacrylic acid hydrogel as a resist.
doi.org/10.1116/6.00...
From @gatechengineers.bsky.social, this work presents an all-water-based electron beam lithography approach w/ polyacrylic acid hydrogel as a resist.
doi.org/10.1116/6.00...
Authors from @tyndallinstitute.bsky.social use theoretical modeling to predict #ALDep chemistry of Ru on TaN using a RuO₄ precursor — an area of growing importance for advanced interconnect stacks.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Prediction of atomic layer deposition chemistry of Ru onto TaN for interconnect stack using the RuO4 precursor
Interconnects are crucial for the operation of electronic devices and consist of a diffusion barrier, liner layer, and the metal copper. However, this trilayer
doi.org
January 28, 2026 at 7:53 PM
Authors from @tyndallinstitute.bsky.social use theoretical modeling to predict #ALDep chemistry of Ru on TaN using a RuO₄ precursor — an area of growing importance for advanced interconnect stacks.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
#ALEtch is a promising technique for the nanofabrication of thin-film lithium niobate, used in nanophotonics.
Authors from @caltech.edu & @unevadareno.bsky.social report an atomically precise etch process which could enable unprecedented device performance.
doi.org/10.1116/6.00...
Authors from @caltech.edu & @unevadareno.bsky.social report an atomically precise etch process which could enable unprecedented device performance.
doi.org/10.1116/6.00...
Directional atomic layer etching of MgO-doped lithium niobate using Br-based plasma
Lithium niobate ( LiNbO 3, LN) is a nonlinear optical material of high interest for integrated photonics with applications ranging from optical communications t
doi.org
January 27, 2026 at 5:45 PM
#ALEtch is a promising technique for the nanofabrication of thin-film lithium niobate, used in nanophotonics.
Authors from @caltech.edu & @unevadareno.bsky.social report an atomically precise etch process which could enable unprecedented device performance.
doi.org/10.1116/6.00...
Authors from @caltech.edu & @unevadareno.bsky.social report an atomically precise etch process which could enable unprecedented device performance.
doi.org/10.1116/6.00...
Multilayer oxide structures with:
High precision? ✅
Complex lithography? ❌
Multiple masking steps? ❌
Authors from Ghent University demonstrate a polymer-assisted AS-ALD method that allows stacked multilayer oxides to be formed with a single polymer template.
doi.org/10.1116/6.00...
High precision? ✅
Complex lithography? ❌
Multiple masking steps? ❌
Authors from Ghent University demonstrate a polymer-assisted AS-ALD method that allows stacked multilayer oxides to be formed with a single polymer template.
doi.org/10.1116/6.00...
Polymer assisted area selective ALD of multilayered materials using alkylamine precursors
Area selective atomic layer deposition (AS-ALD) has gained considerable attention in nanomanufacturing due to its potential for precise material placement. Whil
doi.org
January 26, 2026 at 4:25 PM
Multilayer oxide structures with:
High precision? ✅
Complex lithography? ❌
Multiple masking steps? ❌
Authors from Ghent University demonstrate a polymer-assisted AS-ALD method that allows stacked multilayer oxides to be formed with a single polymer template.
doi.org/10.1116/6.00...
High precision? ✅
Complex lithography? ❌
Multiple masking steps? ❌
Authors from Ghent University demonstrate a polymer-assisted AS-ALD method that allows stacked multilayer oxides to be formed with a single polymer template.
doi.org/10.1116/6.00...
From @princeton.edu & TEL Technology Center, Americas, authors develop a diffusion–reaction model of spatial & temporal evolution of reactive species during plasma-assisted #ALEtch. It links diffusion, reaction kinetics, & ion-driven effects in a physically meaningful way.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Diffusion-reaction modeling of atomic layer etching
We present a diffusion-reaction model of plasma-assisted atomic layer etching (ALE) of silicon (Si) with alternating exposure to chlorine gas ( Cl 2) and argon
doi.org
January 22, 2026 at 4:01 PM
From @princeton.edu & TEL Technology Center, Americas, authors develop a diffusion–reaction model of spatial & temporal evolution of reactive species during plasma-assisted #ALEtch. It links diffusion, reaction kinetics, & ion-driven effects in a physically meaningful way.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
From @colorado.edu & SEMES, authors use thermal #ALEtch on SnO₂ with sequential self-limiting ligand-exchange/conversion & fluorination reactions. Self-limiting surface chemistry enables controlled, atomic-scale removal of SnO₂ with purely thermal processes.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Thermal atomic layer etching of SnO2 by fluorination and ligand-exchange/conversion reactions using sequential hydrogen fluoride and Al(CH3)3 exposures
Thermal atomic layer etching (ALE) of SnO2 was performed using a sequence of self-limiting fluorination and subsequent ligand-exchange/conversion reactions. The
doi.org
January 22, 2026 at 12:49 PM
From @colorado.edu & SEMES, authors use thermal #ALEtch on SnO₂ with sequential self-limiting ligand-exchange/conversion & fluorination reactions. Self-limiting surface chemistry enables controlled, atomic-scale removal of SnO₂ with purely thermal processes.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
From the @uarkansas.bsky.social, authors employ a unique #MBE strategy to grow GeSn at low substrates temps & low fluxes, resulting in crystalline films with high Sn content. This paves a promising path for silicon-based photonic and quantum device applications with GeSn!
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
We report the epitaxial growth of high quality GeSn alloys with Sn compositions up to 21.25 ± 1% by effusion-cell molecular beam epitaxy (MBE). Achieving such a
doi.org
January 16, 2026 at 5:54 PM
From the @uarkansas.bsky.social, authors employ a unique #MBE strategy to grow GeSn at low substrates temps & low fluxes, resulting in crystalline films with high Sn content. This paves a promising path for silicon-based photonic and quantum device applications with GeSn!
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Recently highlighted, this article is now featured on our latest cover of #JVSTA!
Next time you publish with us, submit an eye-catching image for the cover. We would love to feature your research, too!
Read this featured article here: doi.org/10.1116/6.00...
Next time you publish with us, submit an eye-catching image for the cover. We would love to feature your research, too!
Read this featured article here: doi.org/10.1116/6.00...
January 9, 2026 at 3:41 PM
Recently highlighted, this article is now featured on our latest cover of #JVSTA!
Next time you publish with us, submit an eye-catching image for the cover. We would love to feature your research, too!
Read this featured article here: doi.org/10.1116/6.00...
Next time you publish with us, submit an eye-catching image for the cover. We would love to feature your research, too!
Read this featured article here: doi.org/10.1116/6.00...
Authors from @pennstateuniv.bsky.social use Raman spectroscopy to investigate the fundamental effects of metal-induced doping on different MoS₂ epilayer thicknesses, helping to tailor MoS₂ devices to meet the demands of advanced electronic applications.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Influence of metal-induced doping on different 2D MoS2 epilayers for field effect transistors
Molybdenum disulfide (MoS2), a prominent member of the transition metal dichalcogenide family, stands out for its unique electronic and optical properties. To d
doi.org
January 7, 2026 at 4:26 PM
Authors from @pennstateuniv.bsky.social use Raman spectroscopy to investigate the fundamental effects of metal-induced doping on different MoS₂ epilayer thicknesses, helping to tailor MoS₂ devices to meet the demands of advanced electronic applications.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Happy Holidays from our team! Wishing you the best during this holiday season and into the new year. We look forward to sharing more exciting research with you in 2026.✨
December 23, 2025 at 2:34 PM
Happy Holidays from our team! Wishing you the best during this holiday season and into the new year. We look forward to sharing more exciting research with you in 2026.✨
Featured on the latest #JVSTA cover, Joshua Wagner & Steven J. Sibener from the University of Chicago investigate how atomic oxygen affects the behavior of C₆₀ molecules on 2D materials.
Read the featured article here! doi.org/10.1116/6.00...
Read the featured article here! doi.org/10.1116/6.00...
December 22, 2025 at 5:36 PM
Featured on the latest #JVSTA cover, Joshua Wagner & Steven J. Sibener from the University of Chicago investigate how atomic oxygen affects the behavior of C₆₀ molecules on 2D materials.
Read the featured article here! doi.org/10.1116/6.00...
Read the featured article here! doi.org/10.1116/6.00...
Researchers from Tokyo Electron & TEL Technology Center, Americas demonstrate a novel etching process capable of fabricating 3D-NAND memory channel hole structures with a depth of 10 μm and an aspect ratio of 100.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Development for high-aspect-ratio hole etching with hydrogen fluoride gas based cryogenic process
We demonstrate a novel plasma process capable of etching the ONON (silicon oxide/silicon nitride) hole structure for manufacturing 3D-NAND devices with a depth
doi.org
December 19, 2025 at 3:04 PM
Researchers from Tokyo Electron & TEL Technology Center, Americas demonstrate a novel etching process capable of fabricating 3D-NAND memory channel hole structures with a depth of 10 μm and an aspect ratio of 100.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Electron beam generated plasmas are useful in the production of ion-ion plasmas due to their low electron temp. Authors examine characteristics of these plasmas in Ar/SF₆ & Ar/NF₃ mixtures, linking them to the efficacy of the F layer growth process.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Electron beam generated ion-ion plasmas produced in Ar/SF6 and Ar/NF3 mixtures for plasma anodization
In this work, electron beam generated plasmas in Ar/SF6 and Ar/NF3 mixtures are used to form ion-ion plasmas from which one can extract F− ions. These negative
doi.org
December 18, 2025 at 8:26 PM
Electron beam generated plasmas are useful in the production of ion-ion plasmas due to their low electron temp. Authors examine characteristics of these plasmas in Ar/SF₆ & Ar/NF₃ mixtures, linking them to the efficacy of the F layer growth process.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
A major challenge in improving thermoelectric materials is understanding how structural & substrate effects impact performance. Here, authors study the effect various qualities of FeSi films grown on Si substrates have on key transport properties.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...
Crystal structure and thermoelectric efficiency of FeSi films on Si substrates: Shunting effects and first-principles calculations of lattice thermal conductivity
The crystal structure and thermoelectric parameters (conductivity, Seebeck coefficient, and power factor) of ultrathin (3–3.5 nm) stoichiometric monoclinic FeSi
doi.org
December 18, 2025 at 6:45 PM
A major challenge in improving thermoelectric materials is understanding how structural & substrate effects impact performance. Here, authors study the effect various qualities of FeSi films grown on Si substrates have on key transport properties.
doi.org/10.1116/6.00...
doi.org/10.1116/6.00...